(China (Mainland))
Product Summary
The MRF150 is a RF Power FET.
Parametrics
Absolute maximum ratings: (1)drain-source voltage: 125 V; (2)drain-gate voltage: 125 V; (3)gate-source voltage: ±40 V; (4)drain current-continuous: 16 A; (5)total device dissipation @ Tc=25℃: 300 W; (6)derate above 25℃: 1.71 W/℃; (7)storage temperature range: -65 to 150 ℃; (8)operating junction temperature: 200 ℃.
Features
Features: (1)Superior high order IMD: IMD(d3) (150W PEP): -32dB (Typ.), IMD(d11) (150W PEP): -60dB (Typ.); (2)Specified 50V, 30MHz characteristics: Output power = 150 Watts, Power gain = 17 dB (Typ.), Efficiency = 45% (Typ.); (3)100% tested for load mismatch at all phase angles.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MRF15030 |
Other |
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Data Sheet |
Negotiable |
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MRF15060 |
Other |
|
Data Sheet |
Negotiable |
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MRF15060S |
Other |
|
Data Sheet |
Negotiable |
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MRF1507 |
Other |
|
Data Sheet |
Negotiable |
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MRF1507T1 |
Other |
|
Data Sheet |
Negotiable |
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MRF15090 |
Other |
|
Data Sheet |
Negotiable |
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MRF1500 |
Other |
|
Data Sheet |
Negotiable |
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MRF150 |
M/A-COM Technology Solutions |
Transistors RF MOSFET Power 5-150MHz 150Watts 50Volt Gain 17dB |
Data Sheet |
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